? semiconductor components industries, llc, 2004 august, 2004 ? rev. 0 1 publication order number: NIF5003N/d NIF5003N preferred device self-protected fet with temperature and current limit 42 v, 14 a, single n?channel, sot?223 hdplus ? devices are an advanced series of power mosfets which utilize on semiconductors latest mosfet technology process to achieve the lowest possible on?resistance per silicon area while incorporating smart features. integrated thermal and current limits work together to provide short circuit protection. the devices feature an integrated drain?to?gate clamp that enables them to withstand high energy in the avalanche mode. the clamp also provides additional safety margin against unexpected voltage transients. electrostatic discharge (esd) protection is provided by an integrated gate?to?source clamp. features ? short circuit protection/current limit ? thermal shutdown with automatic restart ? i dss specified at elevated temperature ? avalanche energy specified ? slew rate control for low noise switching ? overvoltage clamped protection maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage internally clamped v dss 42 vdc gate?to?source voltage v gs 14 vdc drain current continuous i d internally limited total power dissipation @ t a = 25 c (note 1) @ t a = 25 c (note 2) p d 1.25 1.9 w thermal resistance junction?to?case junction?to?ambient (note 1) junction?to?ambient (note 2) r jc r ja r ja 12 100 65 c/w single pulse drain?to?source avalanche energy (v dd = 25 vdc, v gs = 5.0 vdc, v ds = 40 vdc, i l = 3.2 apk, l = 120 mh, r g = 25 ) e as 400 mj operating and storage temperature range (note 3) t j , t stg ?55 to 150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. surface mounted onto minimum pad size (0.412 square) fr4 pcb, 1 oz cu. 2. mounted onto 1 square pad size (1.127 square) fr4 pcb, 1 oz cu. 3. normal pre?fault operating range. see thermal limit range conditions. m pwr drain source temperature limit gate input current limit current sense r g overvoltage protection esd protection http://onsemi.com preferred devices are recommended choices for future use and best overall value. device package shipping 2 ordering information NIF5003Nt1 sot?223 1000/tape & reel NIF5003Nt3 sot?223 4000/tape & reel sot?223 case 318e style 3 drain gate drain source (top view) marking diagram 1 2 3 4 v dss (clamped) r ds(on) typ i d max (limited) 42 v 53 m @ 10 v 14 a aww 5003n 5003n = specific device code a = assembly location ww = work week 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. http://onsemi.com
NIF5003N http://onsemi.com 2 mosfet electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source clamped breakdown voltage (v gs = 0 vdc, i d = 250 adc) (v gs = 0 vdc, i d = 250 adc, t j = ?40 c to 150 c) v (br)dss 42 40 46 45 51 51 vdc mv/ c zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) (v ds = 32 vdc, v gs = 0 vdc, t j = 150 c) i dss ? ? 0.6 2.5 5.0 ? adc gate input current (v gs = 5.0 vdc, v ds = 0 vdc) i gss ? 50 125 adc on characteristics gate threshold voltage (v ds = v gs , i d = 1.2 madc) threshold temperature coefficient (negative) v gs(th) 1.0 ? 1.7 5.0 2.2 ? vdc mv/ c static drain?to?source on?resistance (note 4) (v gs = 10 vdc, i d = 3.0 adc, t j @ 25 c) (v gs = 10 vdc, i d = 3.0 adc, t j @ 150 c) r ds(on) ? ? 53 95 68 123 m static drain?to?source on?resistance (note 4) (v gs = 5.0 vdc, i d = 3.0 adc, t j @ 25 c) (v gs = 5.0 vdc, i d = 3.0 adc, t j @ 150 c) r ds(on) ? ? 63 105 76 135 m source?drain forward on voltage (i s = 7.0 a, v gs = 0 v) v sd ? 0.95 1.1 v switching characteristics turn?on time (v in to 90% i d ) r l = 4.7 , v in = 0 to 10 v, v dd = 12 v t (on) ? 16 20 s turn?off time (v in to 10% i d ) r l = 4.7 , v in = 10 to 0 v, v dd = 12 v t (off) ? 80 100 s slew rate on r l = 4.7 , v in = 0 to 10 v, v dd = 12 v ?dv ds /dt on ? 1.4 ? v s slew rate off r l = 4.7 , v in = 10 to 0 v, v dd = 12 v dv ds /dt off ? 0.5 ? v s self protection characteristics (t j = 25 c unless otherwise noted) (note 5) current limit (v gs = 5.0 vdc) v ds = 10 v (v gs = 5.0 vdc, t j = 150 c) i lim 12 7.0 18 13 24 18 adc current limit (v gs = 10 vdc) v ds = 10 v (v gs = 10 vdc, t j = 150 c) i lim 18 13 22 18 30 25 adc temperature limit (turn?off) v gs = 5.0 vdc t lim(off) 150 175 200 c thermal hysteresis v gs = 5.0 vdc t lim(on) ? 15 ? c temperature limit (turn?off) v gs = 10 vdc t lim(off) 150 165 185 c thermal hysteresis v gs = 10 vdc t lim(on) ? 15 ? c input current during thermal fault v ds = 35 v, (v gs = 5.0 v, t j = 150 c) i g(fault) 0.6 ? ? ma input current during thermal fault v ds = 35 v, (v gs = 10 v, t j = 150 c) i g(fault) 2.0 ? ? ma esd electrical characteristics (t j = 25 c unless otherwise noted) electro?static discharge capability human body model (hbm) esd 4000 ? ? v electro?static discharge capability machine model (mm) esd 400 ? ? v 4. pulse test: pulse width = 300 s, duty cycle = 2%. 5. fault conditions are viewed as beyond the normal operating range of the part.
NIF5003N http://onsemi.com 3 typical performance curves 100 c 0 35 20 3 1 v ds , drain?to?source voltage (volts) i d, drain current (amps) 15 5 0 figure 1. on?region characteristics 12 4 4 0 figure 2. transfer characteristics v gs , gate?to?source voltage (volts) 0.3 46 0.5 0 figure 3. on?resistance vs. gate?to?source voltage v gs , gate?to?source voltage (volts) r ds(on), drain?to?source resistance ( ) i d, drain current (amps) 0.05 figure 4. on?resistance vs. drain current and gate voltage i d, drain current (amps) ?50 10 ?30 30 1.4 1.0 50 150 figure 5. on?resistance variation with temperature t j , junction temperature ( c) 1.0 35 t j = ?55 c i d = 3 a t j = 25 c 0.045 0.03 70 i d = 3 a v gs = 5 v r ds(on), drain?to?source resistance (normalized) 2 25 c r ds(on), drain?to?source resistance ( ) 1.8 210 10 figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (volts) v gs = 0 v i dss , leakage (na) t j = 150 c t j = 100 c 0.06 10000 100000 100 5 v ds 10 v 0.055 020 10 20 3 79 8 2345 45 30 30 25 0.1 0.2 0.4 0.7 0.9 0.6 0.8 0.035 0.04 110 130 1000 8 12 1.5 2.5 3.5 678910 0.6 0.8 1.2 1.6 90 ?10 40 10 25 35 15 5 4 0.5 3.5 1.5 2.5 4.5 16 2 18 6 10 14 0.07 0.065 0.075 t j = 25 c v gs = 10 v v gs = 5 v
NIF5003N http://onsemi.com 4 typical performance curves 0.9 1 v sd , source?to?drain voltage (volts) figure 7. diode forward voltage vs. current i s , source current (amps) v gs = 0 v t j = 25 c 10 0.7 0.5 1 0.1 0.8 0.6 0.4
NIF5003N http://onsemi.com 5 package dimensions sot?223 case 318e?04 issue k h s f a b d g l 4 123 0.08 (0003) c m k j dim a min max min max millimeters 0.249 0.263 6.30 6.70 inches b 0.130 0.145 3.30 3.70 c 0.060 0.068 1.50 1.75 d 0.024 0.035 0.60 0.89 f 0.115 0.126 2.90 3.20 g 0.087 0.094 2.20 2.40 h 0.0008 0.0040 0.020 0.100 j 0.009 0.014 0.24 0.35 k 0.060 0.078 1.50 2.00 l 0.033 0.041 0.85 1.05 m 0 10 0 10 s 0.264 0.287 6.70 7.30 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 3: pin 1. gate 2. drain 3. source 4. drain
NIF5003N http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NIF5003N/d hdplus is a trademark of semiconductor components industries, llc (scillc) literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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